• DocumentCode
    2503962
  • Title

    High efficiency amorphous silicon solar cells with ´Delta-doped´ p-layer

  • Author

    Shibata, A. ; Kazama, Y. ; Seki, K. ; Kim, W.Y. ; Yamanaka, S. ; Konagai, M. ; Takahashi, K.

  • Author_Institution
    Ebara Res. Co. Ltd., Japan
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    317
  • Abstract
    Novel amorphous silicon solar cells with sigma -doped p layers have been fabricated. The boron concentration in the sigma -doped p layer has been measured by secondary ion mass spectrometry. A peak boron concentration of 2*1021/cm3, which is one or two orders of magnitude larger than that of a conventional a-Si p layer, has been obtained. A conversion efficiency of 11.5% has been obtained for a solar cell with the sigma -doped p layer.
  • Keywords
    amorphous semiconductors; boron; elemental semiconductors; secondary ion mass spectroscopy; silicon; solar cells; 11.5 percent; Si:B solar cells; amorphous semiconductors; conversion efficiency; delta doping; p layers; secondary ion mass spectrometry; Amorphous silicon; Atomic layer deposition; Boron; Buffer layers; Circuits; Computer simulation; Doping; Gallium arsenide; Mass spectroscopy; Photovoltaic cells; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105712
  • Filename
    105712
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2503962