New Ge-Me and Si-Me thin film compositions for high-temperature thermal converter construction

Author

Beensh-Marchwicka, Grama ; Prociów, Eugeniusz ; Osadnik, Stanislaw

Author_Institution

Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol., Poland

fYear

2003

fDate

8-11 May 2003

Firstpage

22

Lastpage

25

Abstract

The applicability of some thin films based on Ge-Me and Si-Me compositions in the thermal converter construction for high-temperature range has been investigated. All films were deposited by d.c. pulse magnetron sputtering. Testing converters contained the integrated thermopile with linear symmetry based on p-type Ge(Sb,V) and TiSi₂ material combination and the heater built up using MeSi₂ (Me: Mo, V, W, Ta, Ti) compositions with TCR varying from 0 to -1500 ppm/K. This choice permits to control the uniformity of distribution of temperature field. Various material combinations have been evaluated with the respect to the performance characteristics of thermal converters.

Keywords

Seebeck effect; metallic thin films; semiconductor thin films; sputter deposition; thermoelectric conversion; thermopiles; titanium compounds; Ge-Me compositions; Si-Me compositions; TiSi₂; dc pulse magnetron sputtering; high-temperature thermal converter construction; material combinations; temperature field distribution; thin film compositions; Composite materials; Gold; Semiconductor films; Semiconductor materials; Sputtering; Substrates; Temperature; Thermal resistance; Thermoelectricity; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Technology: Integrated Management of Electronic Materials Production, 2003. 26th International Spring Seminar on

Print_ISBN

0-7803-8002-9

Type

conf

DOI

10.1109/ISSE.2003.1260476

Filename

1260476