Light intensity dependence of the ambipolar diffusion-length in hydrogenated amorphous silicon (solar cells)

Author

Balberg, I. ; Delahoy, A.E. ; Weakliem, H.

Author_Institution

Chronar Corp., Princeton, NJ, USA

fYear

1988

fDate

1988

Firstpage

352

Abstract

The authors report the utilization of the photocarrier grating technique for a comparative study of the ambipolar diffusion length (L) in hydrogenated amorphous silicon. This novel method for accurately measuring L, permits the reliable determination of its light intensity dependence. Combining this method with standard steady-state photoconductivity measurements yields information on the effects of minute boron doping and intense light soaking on the distribution of states in the forbidden gap. Experimental results obtained with this method are presented and discussed.

Keywords

amorphous semiconductors; carrier lifetime; elemental semiconductors; hydrogen; photoconductivity; silicon; solar cells; Si:H,B solar cells; ambipolar diffusion length; amorphous semiconductors; carrier lifetime; doping; forbidden gap; light intensity dependence; light soaking; photocarrier grating technique; photoconductivity measurements; Amorphous materials; Amorphous silicon; Boron; Doping; Gratings; Length measurement; Measurement standards; Photoconducting materials; Photoconductivity; Photovoltaic cells; Steady-state; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

Conference_Location

Las Vegas, NV, USA

Type

conf

DOI

10.1109/PVSC.1988.105720

Filename

105720