• DocumentCode
    2504459
  • Title

    23.9% monolithic multijunction solar cell

  • Author

    Virshup, G.F. ; Chung, B.-C. ; Werthen, J.G.

  • Author_Institution
    Varian Res. Center, Palo Alto, CA, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    441
  • Abstract
    A monolithically grown two-junction solar cell has been fabricated which produces 23.9% efficiency under AM1.5 global conditions and 22.3% under AM0 conditions. These are the highest one-sun efficiencies reported to date for both AM0 and AM1.5. The Al.35Ga.65As (1.93 eV) top cell and the GaAs (1.42 eV) bottom cell were grown by metal-organic chemical vapor deposition on GaAs substrates. Cell design and processing are described, and results of cell testing are presented.
  • Keywords
    CVD coatings; III-V semiconductors; aluminium compounds; gallium arsenide; solar cells; testing; 1.42 eV; 1.93 eV; 22.3 percent; 23.9 percent; AM0 conditions; AM1.5 global conditions; GaAs-AlGaAs solar cells; metal-organic chemical vapor deposition; monolithic multijunction solar cells; semiconductor; Alloying; Chemical vapor deposition; Contact resistance; Etching; Gallium arsenide; Gold; MOCVD; Metallization; Ohmic contacts; Photovoltaic cells; Process design; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105740
  • Filename
    105740
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2504459