DocumentCode
2504783
Title
New insights affect power MOSFET ruggedness
Author
Phipps, John P. ; Gauen, Kim
Author_Institution
Motorola Inc., Phoenix, AZ, USA
fYear
1988
fDate
1-5 Feb 1988
Firstpage
290
Lastpage
298
Abstract
Issues affecting unclamped inductive switching (UIS) and diode recovery stress (DRS) failure modes of power MOSFET devices are discussed in terms of a modified device equivalent circuit. Test methods for both UIS and DRS are described; a useful format for device DRS capability is also described. The effect on switching efficiency of stored minority carrier charge in the MOSFET source-drain diode is highlighted
Keywords
equivalent circuits; failure analysis; insulated gate field effect transistors; minority carriers; semiconductor device testing; semiconductor diodes; switching; diode recovery stress; failure modes; modified device equivalent circuit; power MOSFET ruggedness; source-drain diode; stored minority carrier charge; switching efficiency; unclamped inductive switching; Bipolar transistors; Circuit testing; Commutation; Equivalent circuits; MOSFET circuits; Plugs; Power MOSFET; Semiconductor diodes; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 1988. APEC '88. Conference Proceedings 1988., Third Annual IEEE
Conference_Location
New Orleans, LA
Type
conf
DOI
10.1109/APEC.1988.10576
Filename
10576
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