Title :
Measurement precautions for high-resistivity silicon solar cells
Author :
King, D.L. ; Gee, J.M. ; Hansen, B.R.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
Several measurement characteristics have been identified that are unique to high-performance, high-resistivity silicon cells. These unique characteristics, which are due to features such as bulk carrier lifetimes on the order of 1 ms, excellent surface passivation, and light trapping, can lead to large performance measurement errors; however, they also offer insight into the physical mechanisms occurring in these devices. The characteristics that were found to have the largest influence on measured performance are described. These include a strong fill factor dependence on voltage sweep rate and direction, sublinear short-circuit current versus irradiance, light-soaking influence on open-circuit voltage and fill factor, and enhanced spectral response beyond 1100 nm due to optical light trapping. Cell measurements and analyses have included both small-area concentrator cells and large-area one-sun cells from various sources.
Keywords :
carrier lifetime; elemental semiconductors; passivation; silicon; solar cells; bulk carrier lifetimes; fill factor dependence; high resistivity Si solar cells; irradiance; light trapping; open-circuit voltage; performance measurement errors; semiconductor; spectral response; sublinear short-circuit current; surface passivation; voltage sweep rate; Capacitance; Charge carrier lifetime; Charge carrier processes; Circuits; Conductivity; Current measurement; Laboratories; Measurement; Passivation; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105763