DocumentCode :
2504922
Title :
Characterization of solar cells by frequency-domain transient analysis
Author :
Haney, R.E. ; Misiakos, K. ; Neugroschel, A.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fYear :
1988
fDate :
1988
Firstpage :
581
Abstract :
The FDTA (frequency-domain transient analysis) technique is applied to extract base transport parameters in a back-surface field silicon solar cell. FDTA relies upon two separate experiments, one for uniformly absorbed light and one for strongly absorbed light. The time-domain short-circuit current responses of the two forms of excitation are captured by a digitizing oscilloscope and then Fourier-transformed. The frequency response may be related to analytical expressions for the short-circuit current. By optimizing the agreement between experimental and analytic spectra, values for the minority-carrier lifetime and diffusion coefficient and the back-surface recombination velocity are obtained. The results obtained at 23 degrees C for a 12.5 Omega -cm n+-p cell with a base thickness of 300 mu m are: tau n=50 mu s, Dn=36.6 cm2/s, S<5 cm/s, and Ln=(Dn tau n)12/=428 mu m.
Keywords :
carrier lifetime; diffusion in solids; electrical conductivity of crystalline semiconductors and insulators; electron-hole recombination; elemental semiconductors; frequency-domain analysis; minority carriers; short-circuit currents; silicon; solar cells; 23 degC; Fourier transforms; back surface field Si solar cell; back-surface recombination velocity; base transport parameters; diffusion coefficient; digitizing oscilloscope; frequency response; frequency-domain transient analysis; minority-carrier lifetime; n+-p cell; semiconductor; short-circuit current responses; solar cells; strongly absorbed light; uniformly absorbed light; Circuits; Frequency domain analysis; Frequency response; Manufacturing automation; Oscilloscopes; Photovoltaic cells; Radiative recombination; Semiconductor materials; Silicon; Time domain analysis; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105768
Filename :
105768
Link To Document :
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