• DocumentCode
    2504968
  • Title

    Influence of oxygen on the performance of silicon solar cells

  • Author

    Sopori, B.L.

  • Author_Institution
    Solar Energy Res. Inst., Golden, CO, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    591
  • Abstract
    The effects of dissolved and precipitated oxygen in silicon on the solar cell performance are identified. It is shown that oxygen concentrations up to 5*1017 cm-3 can be beneficial for improving cell performance. The presence of precipitated oxygen, which can often accompany dissolved oxygen concentrations beyond 5*1017 cm-3, strongly influences the cell performance. The dominant mechanisms influencing the cell parameters are discussed. The implications of these results are discussed in the light of material requirements for high-efficiency silicon solar cells.
  • Keywords
    elemental semiconductors; oxygen; silicon; solar cells; O2 concentration; Si solar cells; Si:O; dissolved O2; high-efficiency; performance; precipitate O2; semiconductor; Boron; Etching; Impurities; Infrared spectra; Lead; Oxygen; Photovoltaic cells; Pressure control; Silicon; Stacking;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105770
  • Filename
    105770