DocumentCode
2504968
Title
Influence of oxygen on the performance of silicon solar cells
Author
Sopori, B.L.
Author_Institution
Solar Energy Res. Inst., Golden, CO, USA
fYear
1988
fDate
1988
Firstpage
591
Abstract
The effects of dissolved and precipitated oxygen in silicon on the solar cell performance are identified. It is shown that oxygen concentrations up to 5*1017 cm-3 can be beneficial for improving cell performance. The presence of precipitated oxygen, which can often accompany dissolved oxygen concentrations beyond 5*1017 cm-3, strongly influences the cell performance. The dominant mechanisms influencing the cell parameters are discussed. The implications of these results are discussed in the light of material requirements for high-efficiency silicon solar cells.
Keywords
elemental semiconductors; oxygen; silicon; solar cells; O2 concentration; Si solar cells; Si:O; dissolved O2; high-efficiency; performance; precipitate O2; semiconductor; Boron; Etching; Impurities; Infrared spectra; Lead; Oxygen; Photovoltaic cells; Pressure control; Silicon; Stacking;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105770
Filename
105770
Link To Document