• DocumentCode
    2504981
  • Title

    High efficiency Al0.32Ga0.68As-GaAs tandem solar cells with three terminals

  • Author

    Mayet, L. ; Gavand, M. ; Montégu, B. ; Laugier, A.

  • Author_Institution
    UA-CNRS, Villeurbanne, France
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    597
  • Abstract
    The authors describe a particular three-terminal tandem solar cell without grid in the illuminated area. This device is narrow and linear and is designed to operate with linear concentrators under a moderate sunlight concentration. The bottom cell is a p-n GaAs junction; the top cell is a p-n Al0.32Ga0.68As junction. They were realized by LPE (liquid-phase epitaxy) and isothermal LPE techniques. By the judicious choice of the aluminum content of the AlGaAs layer, a power conversion efficiency of 25.1% was obtained under the terrestrial conditions of 10 AM1.5, 25 degrees C.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; liquid phase epitaxial growth; semiconductor growth; solar cells; 25 degC; 25.1 percent; Al0.32Ga0.68As-GaAs; bottom cell; high efficiency; isothermal liquid phase epitaxy; liquid-phase epitaxy; moderate sunlight concentration; p-n Al0.32Ga0.68As junction; p-n GaAs junction; power conversion efficiency; semiconductor; three-terminal tandem solar cell; Aluminum; Epitaxial growth; Fabrication; Gallium arsenide; Isothermal processes; Mirrors; Optical filters; Optical losses; P-n junctions; Photonic band gap; Photovoltaic cells; Power conversion; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105772
  • Filename
    105772
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2504981