DocumentCode
2505115
Title
High efficiency Al0.38Ga0.62As solar cells
Author
Loo, R.Y. ; Kamath, G.S.
Author_Institution
Hughes Res. Lab., Malibu, CA, USA
fYear
1988
fDate
1988
Firstpage
635
Abstract
The authors report on the characteristics of Al0.38Ga0.62As liquid-phase epitaxy layers determined using deep-level transient spectroscopy, surface photovoltage, and photoluminescence. Because the radiation hardness of the cell is important for space cells, the authors present the results of 1 MeV electron irradiation of large-area, 2*2-cm Al0.38Ga0.62As cells. The minority carrier lifetime was 13 ns, almost as long as the value (20 ns) found in GaAs. The Al0.38Ga0.62As layer gives a very strong photoluminescence signal, with two distinct peaks indicating that the material is close to defect-free.
Keywords
III-V semiconductors; aluminium compounds; carrier lifetime; deep level transient spectroscopy; electron beam effects; gallium arsenide; liquid phase epitaxial growth; minority carriers; photoluminescence; semiconductor epitaxial layers; solar cells; Al0.38Ga0.62As solar cells; deep-level transient spectroscopy; electron irradiation; high efficiency; liquid-phase epitaxy layers; minority carrier lifetime; photoluminescence; radiation hardness; semiconductor; space cells; surface photovoltage; Charge carrier lifetime; Coatings; Electron mobility; Electrons; Epitaxial growth; Fingers; Gallium arsenide; Hall effect; Length measurement; Material properties; P-n junctions; Photoluminescence; Photovoltaic cells; Reflection; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105780
Filename
105780
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