• DocumentCode
    2505156
  • Title

    Development of a long wavelength InGaAsP bottom solar cell for multijunction stacks

  • Author

    Rhoads, Sandra L. ; Negley, Gerald H. ; Barnett, Allen M.

  • Author_Institution
    Astrosyst. Inc., Newark, DE, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    649
  • Abstract
    Long-wavelength InGaAsP solar cells have been fabricated that exhibit exceptional open-circuit voltage values for devices that have not yet been optimized. Quantum efficiency studies demonstrate that a long-wavelength InGaAsP bottom cell can perform well as a photon scavenger enhancing the performance of single-junction solar cells. InGaAsP bottom solar cells demonstrating a 5.1% AM0, 100X efficiency under AlGaAs material have been fabricated. With the current rate of development, it is projected that a 28% (AM0, 100X) space-qualified AlGaAs/InGaAsP tandem stack will be attainable in the short term.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; solar cells; 28 percent; 5.1 percent; AlGaAs/InGaAsP tandem stack; InGaAsP bottom solar cell; long wavelength; multijunction stacks; open-circuit voltage; photon scavenger; quantum efficiency; semiconductor; single-junction solar cells; Buildings; Gallium arsenide; Indium phosphide; Photonic band gap; Photovoltaic cells; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105783
  • Filename
    105783