Monitoring of large-area solar cell homogeneity by local irradiation

Author

Benda, V. ; Asresahegn, A.L. ; Radil, J.

Author_Institution

Dept. of Electrotechnol., Czech Tech. Univ. in Prague, Czech Republic

fYear

2003

fDate

8-11 May 2003

Firstpage

295

Lastpage

297

Abstract

The paper refers about a possibility to check carrier lifetime distribution over the area of power (large-area) solar cells. The carrier lifetime in volume of the cell body can be evaluated using local irradiation of the surface of large-area solar cells with a laser diode (λ = 820 nm) from measured values of open circuit voltage V_oc. The method can give information about recombination centres distribution in large-area solar cells. From V_oc distribution, also position and extent of local defects can also be determined. Solar cell diagnostic methods can be used to investigate the influence of technology on characteristics of solar cells, with the aim of increasing efficiency and reliability of solar cells.

Keywords

carrier lifetime; measurement by laser beam; radiation effects; semiconductor lasers; solar cells; 820 nm; carrier lifetime distribution; diagnostic methods; large-area solar cells; laser diode; local defects; local irradiation; open circuit voltage method; recombination centres distribution; solar cell homogeneity; Charge carrier lifetime; Circuit simulation; Current density; Diode lasers; Equivalent circuits; Monitoring; Photovoltaic cells; Solar power generation; Spontaneous emission; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Technology: Integrated Management of Electronic Materials Production, 2003. 26th International Spring Seminar on

Print_ISBN

0-7803-8002-9

Type

conf

DOI

10.1109/ISSE.2003.1260535

Filename

1260535