• DocumentCode
    2505236
  • Title

    Buried metallic layers in silicon using wafer fusion bonding techniques

  • Author

    Goh, W.L. ; Armstrong, B.M. ; Gamble, H.S.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK
  • fYear
    1994
  • fDate
    12-14 Apr 1994
  • Firstpage
    625
  • Abstract
    Technologies for the production of buried titanium disilicide layers in silicon are described. Silicide direct bonding to silicon dioxide has required thinning of the wafer to provide void free bonding. Bonding of titanium coated silicon to silicon or silicon dioxide by silicide formation has been found to provide a better process with higher yield for void free bonds. Thermal stability of titanium disilicide at 1000°C has been shown to be compromised if the titanium disilicide is bonded directly to silicon dioxide
  • Keywords
    buried layers; elemental semiconductors; silicon; thermal stability; titanium; titanium compounds; wafer bonding; 1000 C; Si-Ti; Si-TiSi2-Si; Si-TiSi2-SiO2; buried metallic layers; silicide formation; thermal stability; void free bonding; wafer fusion bonding techniques; Conductivity; Production; Rapid thermal annealing; Silicides; Silicon compounds; Substrates; Tensile stress; Thyristors; Titanium; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrotechnical Conference, 1994. Proceedings., 7th Mediterranean
  • Conference_Location
    Antalya
  • Print_ISBN
    0-7803-1772-6
  • Type

    conf

  • DOI
    10.1109/MELCON.1994.381013
  • Filename
    381013
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2505236