Design considerations for MMIC distributed amplifiers

Author

Ergun, Sanli ; Atalar, Abdullah

Author_Institution

Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey

fYear

1994

fDate

12-14 Apr 1994

Firstpage

609

Abstract

The bandwidth of the input artificial line in a distributed amplifier is the main band limiting factor. By choosing this impedance properly the bandwidth of a distributed amplifier can be maximized. A four section GaAs MESFET distributed amplifier is designed using this strategy. The fabricated MMIC amplifier gives satisfactory performance. By adding the proper length of series transmission lines in the drain side, the gain and the gain flatness of the amplifier can be further improved. This fact is presented via simulation results. The superior gain potential of cascode connected FETs is also demonstrated

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; distributed amplifiers; field effect MMIC; gallium arsenide; microwave amplifiers; GaAs; MMIC distributed amplifiers; bandwidth; cascode connected FETs; design; four section GaAs MESFET distributed amplifier; gain; gain flatness; impedance; input artificial line; series transmission lines; simulation; Bandwidth; Capacitance; Capacitors; Distributed amplifiers; FETs; Frequency; Impedance; MESFETs; MMICs; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 1994. Proceedings., 7th Mediterranean

Conference_Location

Antalya

Print_ISBN

0-7803-1772-6

Type

conf

DOI

10.1109/MELCON.1994.381017

Filename

381017