Analysis of the defects induced by boron implantation in silicon after sequential annealing processes

TEM studies on boron implanted silicon wafers were carried out in order to determine the recovery of the lattice structure for different kind of post-implantation annealings. A more efficient recovery (low dislocation density) was obtained for a double-step annealing (600°C+900°C and 600°C+1150°C for 30 min.) with respect to the single step one, for samples boron implanted with a dose N=10¹⁴ cm^-2 and N=10¹⁵ cm^-2 at the energy E=80 keV. The contribution of the mismatch stress to the driving forces acting on dislocations was considered to explain the behaviour of the dislocation dynamics