Title :
Semiconductor with bulk and two-dimensional conductivities: a new element for microelectronics
Author :
Pogrebnyak, V.A. ; Khalameida, D.D. ; Yakovenko, V.M.
Author_Institution :
Inst. of Radiophys. & Electron., Acad. of Sci., Kharkov, Ukraine
Abstract :
Electrical properties of single mosaic (HgCd)Te crystals have been investigated. It is found that that samples display a new property: a two-dimensional conductivity along block boundaries. The helium temperature galvanomagnetic experiments demonstrate the 2D nature of the block boundary conductivity. Thus, a (HgCd)Te sample has p- or n-type bulk conductivity and a two-dimensional conductivity along block boundaries
Keywords :
II-VI semiconductors; cadmium compounds; electrical conductivity; galvanomagnetic effects; mercury compounds; mosaic structure; HgCdTe; block boundaries; electrical properties; helium temperature galvanomagnetic experiments; microelectronics; n-type bulk conductivity; p-type bulk conductivity; semiconductor; single mosaic (HgCd)Te crystals; two-dimensional conductivity; Conducting materials; Conductivity; Crystallization; Crystals; Electrons; Helium; Magnetic fields; Microelectronics; Temperature; Two dimensional displays;
Conference_Titel :
Electrotechnical Conference, 1994. Proceedings., 7th Mediterranean
Conference_Location :
Antalya
Print_ISBN :
0-7803-1772-6
DOI :
10.1109/MELCON.1994.381027
