DC to 40 GHz on-wafer package for RF MEMS switches

Author

Margomenos, Alexandros ; Katehi, Linda P B

Author_Institution

Radiat. Lab., Michigan Univ., Ann Arbor, MI, USA

fYear

2002

fDate

21-23 Oct. 2002

Firstpage

91

Lastpage

94

Abstract

A silicon micromachined on-wafer DC to 40 GHz packaging scheme for RF MEMS switches is presented. The designed on-wafer package has an insertion loss which is less than 0.4 dB up to 40 GHz (including a 2700 /spl mu/m long through line) and a return loss below -25 dB up to 40 GHz. Its fabrication process is designed so as to be completely compatible with the MEMS switch process, hence allowing the parallel fabrication of all the components on one wafer. The proposed on-wafer packaging approach requires no external wiring to achieve signal propagation and thus it has the potential for lower loss and better performance at higher frequencies.

Keywords

elemental semiconductors; losses; micromachining; microswitches; microwave switches; semiconductor device measurement; semiconductor device packaging; silicon; -25 dB; 0 Hz to 40 GHz; 0.4 dB; 2700 micron; MEMS switch process compatibility; RF MEMS switches; Si; external wiring; fabrication process design; insertion loss; packaging loss; packaging performance; parallel fabrication; return loss; signal propagation; silicon micromachined on-wafer packaging scheme; Fabrication; Insertion loss; Microswitches; Packaging; Process design; Propagation losses; Radiofrequency microelectromechanical systems; Silicon; Switches; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Performance of Electronic Packaging, 2002 IEEE 11th Topical Meeting on

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-7451-7

Type

conf

DOI

10.1109/EPEP.2002.1057890

Filename

1057890