Design of a low-power low-phase noise MEMS compatible S-band oscillator in 130 nm CMOS technology

Author

Bhattacharya, Avik ; Bhattacharyya, Tarun Kanti

Author_Institution

Adv. Technol. Dev. Centre, IIT Kharagpur, Kharagpur, India

fYear

2010

fDate

17-19 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

This paper discusses the design details of a MEMS compatible low-power, low-phase noise CMOS oscillator. The VCO was designed in UMC 130 nm RFCMOS technology for a multiband system with low power dissipation of 1.17 mW and low phase noise of -117.78 dBc/Hz at 1 MHz offset from the oscillation frequency. The centre frequency of oscillation was chosen to be 2.4 GHz which is a standard for Zigbee applications.

Keywords

CMOS analogue integrated circuits; UHF oscillators; Zigbee; integrated circuit design; low-power electronics; micromechanical devices; phase noise; voltage-controlled oscillators; UMC RFCMOS technology; VCO; Zigbee; centre frequency; frequency 2.4 GHz; low-power low-phase noise CMOS oscillator; low-power low-phase noise MEMS compatible S-band oscillator; multiband system; oscillation frequency; power 1.17 mW; power dissipation; size 130 nm; CMOS integrated circuits; Micromechanical devices; Phase noise; Varactors; Voltage-controlled oscillators; Bit error rate (BER); microelectromechanical systems (MEMS); multiband; phase noise; single sideband (SSB); varactor; voltage controlled oscillator (VCO);

fLanguage

English

Publisher

ieee

Conference_Titel

India Conference (INDICON), 2010 Annual IEEE

Conference_Location

Kolkata

Print_ISBN

978-1-4244-9072-1

Type

conf

DOI

10.1109/INDCON.2010.5712587

Filename

5712587