• DocumentCode
    2505983
  • Title

    The affect of device level modeling on system-level thermal predictions

  • Author

    Weyant, Jens ; Reist, Daniel ; Garner, Scott

  • Author_Institution
    Adv. Cooling Technol., Inc., Lancaster, PA, USA
  • fYear
    2012
  • fDate
    May 30 2012-June 1 2012
  • Firstpage
    245
  • Lastpage
    249
  • Abstract
    Thermal management is important for the performance and reliability of today´s high power and high density electronics systems. The thermal architecture between the device and heat sink can quickly become very complex when designing for ideal operating temperatures. In order to predict the temperature rise, it is desirable to have a simple modeling technique which reduces the amount of time and effort required to obtain accurate results. Often, the heat flux of the device is based on either the die area or the case area. Complication occurs when simplifying the contact area of a given component. Detailed analyses have been performed for two different cases that show the importance of die-level modeling. In the first case, models of an insulated gate bipolar transistor (IGBT) attached to a cold plate are compared to determine the cold plate temperatures when assuming uniform heat flux, and when modeling from the device level. The different analyses results in a heat sink ΔT that differs by 33%. In the second case, a heat spreader is used to cool several high power components. The heat generation areas of the components are significantly smaller than the case footprint. A detailed look at the device level spreading reveals a difference in maximum temperature of 14.5°C between the results of the different modeling techniques used.
  • Keywords
    heat sinks; insulated gate bipolar transistors; reliability; thermal management (packaging); IGBT; cold plate temperature; device level modeling; die-level modeling; heat flux; heat generation; heat sink; heat spreader; high density electronics system; high power electronics system; insulated gate bipolar transistor; reliability; system-level thermal prediction; temperature 14.5 C; thermal architecture; thermal management; Analytical models; Cold plates; Heat sinks; Heating; Insulated gate bipolar transistors; Junctions; Thermal conductivity; electronics cooling; heat spreading; power electronics; thermal modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2012 13th IEEE Intersociety Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1087-9870
  • Print_ISBN
    978-1-4244-9533-7
  • Electronic_ISBN
    1087-9870
  • Type

    conf

  • DOI
    10.1109/ITHERM.2012.6231436
  • Filename
    6231436