DocumentCode
2506075
Title
Microsensors vs. integrated circuits: a study in contrasts
Author
Senturia, S.D.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fYear
1989
fDate
3-6 Dec. 1989
Firstpage
3
Lastpage
7
Abstract
The author examines the contrasts between conventional IC design paradigms and the corresponding paradigms for microsensors in four areas: system partitioning, technology constraints, packaging constraints, and CAD (computer-aided design) requirements. It is found that many of the driving forces for smaller feature sizes, higher levels of integration, higher I/O count, and standardized packages and process sequences in the IC domain have corresponding driving forces in the microsensor domain, but often with opposite direction: maintain larger feature sizes for dimensional precision, keep the level of integration and I/O count minimal, and assume that process technologies and packages may be application specific. In the CAD area, there are many similarities, but the need in the microsensor domain for mechanical performance prediction requires two CAD capabilities: the ability to predict mechanical properties and residual stresses from a description of the process sequence and the ability to construct a 3-D solid model of the fabricated device in a format suitable for mechanical analysis with finite-element-method codes.<>
Keywords
application specific integrated circuits; circuit CAD; electric sensing devices; finite element analysis; packaging; 3-D solid model; CAD; I/O count; IC design paradigms; application specific; feature sizes; finite-element-method codes; mechanical performance prediction; microsensors; packaging constraints; process sequences; residual stresses; system partitioning; technology constraints; Application specific integrated circuits; Design automation; Integrated circuit packaging; Integrated circuit technology; Mechanical factors; Microsensors; Performance analysis; Predictive models; Residual stresses; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1989.74217
Filename
74217
Link To Document