Title :
2010 International Workshop on Junction Technology. Extended Abstracts (IWJT 2010) [Copyright notice]
Abstract :
The following topics are dealt with: annealing technology; ion implantation; Schottky S/D MOSFET; silicide MOSFET; doping technology; MOS device junction; and shallow junction characterization.
Keywords :
MOSFET; annealing; ion implantation; semiconductor doping; semiconductor junctions; MOS device junction; Schottky S/D MOSFET; annealing technology; doping technology; ion implantation; shallow junction characterization; silicide MOSFET;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5474891
