DocumentCode :
2506194
Title :
Internal thermal resistance of a multi-chip packaging design for VLSI-based systems
Author :
Lee, Y.C. ; Ghaffari, H.T. ; Segelken, J.M.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fYear :
1988
fDate :
9-11 May 1988
Firstpage :
293
Lastpage :
301
Abstract :
A heat-transfer study is conducted to determine the steady-state internal thermal resistance of a multichip package for VLSI-based systems. The technology, which is known as advanced VLSI packaging (AVP), has flip-chip-soldered chips interconnected on a silicon substrate. AVPs thermal management approach is to dissipate chip power through the silicon substrate to a heat sink or other packaging levels. A three-dimensional heat-conduction analysis is described that characterizes the chip-to-substrate interface. The thermal performance of typical AVP assemblies, which is affected by thermal vias, solder-bump heights, high-power I/O drivers, and chip sizes, is simulated. The internal resistances of an experimental package consisting of three WE32100 chips are analyzed and measured. The predicted values are 3.7, 4.7, and 5.0 degrees C/W, respectively, which is confirmed by the experimental data.<>
Keywords :
VLSI; hybrid integrated circuits; packaging; AVP; Si substrate; VLSI-based systems; WE32100 chips; advanced VLSI packaging; chip sizes; chip-to-substrate interface; experimental package; flip-chip-soldered chips; heat-transfer study; high-power I/O drivers; internal resistances; internal thermal resistance; multi-chip packaging design; multichip package; solder-bump heights; steady-state internal thermal resistance; thermal management; thermal vias; three-dimensional heat-conduction analysis; Energy management; Packaging; Power system interconnection; Resistance heating; Silicon; Steady-state; Thermal conductivity; Thermal management; Thermal resistance; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Components Conference, 1988., Proceedings of the 38th
Conference_Location :
Los Angeles, CA, USA
Type :
conf
DOI :
10.1109/ECC.1988.12607
Filename :
12607
Link To Document :
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