Predicted performance of near-optimally designed indium phosphide space solar cells at high intensities and temperatures

Author

Goradia, Manju Ghalla ; Thesling, William ; Ghalla-Goradia, M. ; Weinberg, Irving ; Swartz, Clifford K.

Author_Institution

Cleveland State Univ., OH, USA

fYear

1988

fDate

26-30 Sept. 1988

Firstpage

695

Abstract

The authors calculated the expected performance dependence of near-optimally designed shallow homojunction n/sup +/pp/sup +/ InP solar cells on incident intensities up to 200 AMO and temperatures up to 100 degrees C (373 K). Both circular and rectangular cells were considered, the former for use in a Cassegrainian concentrator array at 100 AM0, 80-100 degrees C and the latter for use in a Slats concentrator array at 20 AM0, 80-100 degrees C. With efficiencies near 22% at 80 degrees C, both the circular and rectangular InP shallow homojunction solar cells compare very favorably to GaAs cells of the same design and may be preferable to the GaAs cells for space applications because of the superior radiation tolerance of the InP cells.<>

Keywords

III-V semiconductors; indium compounds; p-n homojunctions; solar cells; solar energy concentrators; 22 percent; 80 to 100 degC; Cassegrainian concentrator array; GaAs cells; InP solar cells; Slats concentrator array; high intensities; high temperature; rectangular cells; semiconductor; shallow homojunction; space solar cells; Conductors; Costs; Crystallization; Gallium arsenide; Indium phosphide; NASA; Optical arrays; Photovoltaic cells; Sun; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

Conference_Location

Las Vegas, NV, USA

Type

conf

DOI

10.1109/PVSC.1988.105792

Filename

105792