DocumentCode
2506281
Title
Development of ZnO:Ga as an Ultra-Fast Alpha Particle Detector
Author
Bourret-Courchesne, E.D. ; Derenzo, S.E. ; Weber, M.J.
Author_Institution
Mater. Sci. Div., Lawrence Berkeley Nat. Lab., CA
Volume
3
fYear
2006
fDate
Oct. 29 2006-Nov. 1 2006
Firstpage
1541
Lastpage
1544
Abstract
We report on ZnO:Ga to produce a high luminosity, ultra fast alpha detector as a system component that provides associated particle imaging (API) capability to neutron generators. ZnO:Ga has been shown to be well suited as the scintillator screen of the detector. Fast luminescence is observed but its intensity and decay time is strongly dependent on the method used for dopant incorporation. We compare samples made by diffusion of Ga metal to samples doped by solid state reaction with Ga2O3 followed by reduction in hydrogen. The ZnO:Ga prepared with reduction of Ga2O3 has a strong blue photoluminescence and a fast decay of the X-ray excited luminescence. The luminosity of the material increases dramatically at cryogenic temperatures. We also present the results of an alternate low-temperature synthesis that produces luminescent particles with a more uniform size distribution.
Keywords
doping; photoluminescence; semiconductor counters; X-ray excited luminescence; ZnO:Ga; associated particle imaging; dopant incorporation; fast luminescence; low-temperature synthesis; neutron generator; particle size distribution; photoluminescence; solid state reaction; ultra-fast alpha particle detector; Alpha particles; Crystallization; Detectors; Hydrogen; Luminescence; Neutrons; Powders; Solid state circuits; Temperature; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location
San Diego, CA
ISSN
1095-7863
Print_ISBN
1-4244-0560-2
Electronic_ISBN
1095-7863
Type
conf
DOI
10.1109/NSSMIC.2006.354192
Filename
4179305
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