Title :
Development of ZnO:Ga as an Ultra-Fast Alpha Particle Detector
Author :
Bourret-Courchesne, E.D. ; Derenzo, S.E. ; Weber, M.J.
Author_Institution :
Mater. Sci. Div., Lawrence Berkeley Nat. Lab., CA
fDate :
Oct. 29 2006-Nov. 1 2006
Abstract :
We report on ZnO:Ga to produce a high luminosity, ultra fast alpha detector as a system component that provides associated particle imaging (API) capability to neutron generators. ZnO:Ga has been shown to be well suited as the scintillator screen of the detector. Fast luminescence is observed but its intensity and decay time is strongly dependent on the method used for dopant incorporation. We compare samples made by diffusion of Ga metal to samples doped by solid state reaction with Ga2O3 followed by reduction in hydrogen. The ZnO:Ga prepared with reduction of Ga2O3 has a strong blue photoluminescence and a fast decay of the X-ray excited luminescence. The luminosity of the material increases dramatically at cryogenic temperatures. We also present the results of an alternate low-temperature synthesis that produces luminescent particles with a more uniform size distribution.
Keywords :
doping; photoluminescence; semiconductor counters; X-ray excited luminescence; ZnO:Ga; associated particle imaging; dopant incorporation; fast luminescence; low-temperature synthesis; neutron generator; particle size distribution; photoluminescence; solid state reaction; ultra-fast alpha particle detector; Alpha particles; Crystallization; Detectors; Hydrogen; Luminescence; Neutrons; Powders; Solid state circuits; Temperature; Zinc oxide;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-0560-2
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2006.354192