• DocumentCode
    2506325
  • Title

    Design and validation of the core and IOs decoupling of the Pentium/spl reg/ III and Pentium/spl reg/ 4 processors

  • Author

    Rahal-Arabi, Tawfik ; Taylor, Greg ; Ma, Matthew ; Jones, Jeff ; Webb, Clair

  • fYear
    2002
  • fDate
    21-23 Oct. 2002
  • Firstpage
    249
  • Lastpage
    252
  • Abstract
    In this paper, we present the design approach and an empirical validation of the power supply decoupling network with particular emphasis on on-die capacitance. The impact of die decoupling on core performance for the 0.18 micron version of the Pentium/spl reg/ 4 has been presented previously (T. Rahal-Arabi et al, VLSI Circ. Symp. Dig. of Tech. Papers, pp. 220-223, 2002). This paper complements the previous work by presenting the design and validation approach for the IO power supply of both the Pentium/spl reg/ III and Pentium/spl reg/ 4 processors. As the Pentium/spl reg/ III processor has separate IO and core supplies, it is a more suitable vehicle for the IO validation. The design approach relies on using the power supply impedance model to determine the required decoupling. The model is widely used in the design of high speed systems (A. Waizman and Chee-Yee Chung, IEEE Conf. Electrical Perf. of Electron. Packaging, pp. 65-68, 2000) but this paper shows that it is less adequate to evaluate performance. The validation approach consists of building several silicon wafers of the Pentium/spl reg/ III and Pentium/spl reg/ 4 processors with various amounts of decoupling. Extensive measurements are then conducted at the silicon, package, and system levels.
  • Keywords
    capacitance; integrated circuit design; integrated circuit measurement; integrated circuit modelling; integrated circuit noise; integrated circuit packaging; microprocessor chips; power supply circuits; 0.18 micron; I/O decoupling; I/O power supply; Pentium 4 processors; Pentium III processors; Si; core decoupling; core performance; core power supply; design validation; die decoupling; on-die capacitance; package level measurements; power supply decoupling network; power supply impedance model; silicon level measurements; silicon wafers; system level measurements; Capacitance; Electrons; Impedance; Packaging; Power supplies; Power system modeling; Semiconductor device modeling; Silicon; Vehicles; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Performance of Electronic Packaging, 2002 IEEE 11th Topical Meeting on
  • Conference_Location
    Monterey, CA, USA
  • Print_ISBN
    0-7803-7451-7
  • Type

    conf

  • DOI
    10.1109/EPEP.2002.1057925
  • Filename
    1057925