Enhanced thermal measurements of high power LEDs by junction characteristic

Author

Ge, Chenning ; Feng, Shiwei ; Zhang, Guangchen ; Ding, Kaikai ; Hu, Peifeng ; Deng, Haitao

Author_Institution

Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China

fYear

2010

fDate

10-11 May 2010

Firstpage

1

Lastpage

4

Abstract

The measurements of junction temperature rise and thermal resistance of power LEDs by junction characteristic are proposed in this paper. The measured thermal resistance is corrected by the light-absorbing method. It is also proved that the physical meaning of the electrical average temperature rise of series LED array system is the arithmetic mean of the temperature rise of all sub-LEDs in the system. Therefore, a novel method to extract the temperature distribution of series LED systems is presented.

Keywords

light emitting diodes; temperature distribution; temperature measurement; thermal resistance measurement; LED array system; arithmetic mean; electrical average temperature rise; enhanced thermal measurements; high power LED; junction characteristic; junction temperature; light-absorbing method; temperature distribution; thermal resistance; Electric resistance; Electrical resistance measurement; Electronic packaging thermal management; Light emitting diodes; Power measurement; Temperature distribution; Temperature measurement; Temperature sensors; Testing; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2010 International Workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5866-0

Type

conf

DOI

10.1109/IWJT.2010.5474904

Filename

5474904