Title :
Improved radiation response of PDSOI LBBC BUSFET
Author :
Bi, Jin-Shun ; Hai, Chao-He ; Han, Zheng-Sheng
Author_Institution :
Inst. of Microelectron., Chinese Sci. Acad., Beijing, China
Abstract :
Partially Depleted Silicon-On-Insulator (PDSOI) Low Barrier Body Contact (LBBC) Body Under Source FET (BUSFET) is proposed by using ISE TCAD 2D process and device simulation. The difference between LBBC BUSFET and normal BUSFET is given. LBBC BUSFET shows improved resistance to radiation over normal BUSFET, thanks to lower body contact resistance and reduced junction barrier height. PDSOI LBBC BUSFET is more suitable for radiation hard applications.
Keywords :
field effect transistors; radiation effects; silicon-on-insulator; ISE TCAD 2D process and device simulation; LBBC resistance; PDSOI LBBC BUSFET; body under source FET; junction barrier height; low barrier body contact; partially depleted silicon-on-insulator; radiation hard applications; radiation resistance; radiation response; Boron; Circuits; Contact resistance; Electron traps; Equations; Immune system; Ionization; MOSFETs; Semiconductor films; Silicon on insulator technology;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5474907
