Title :
Transient thermoelectric self-cooling of a germanium hotspot
Author :
Manno, Michael ; Wang, Peng ; Bar-Cohen, Avram
Author_Institution :
Dept. of Mech. Eng., Univ. of Maryland, College Park, MD, USA
fDate :
May 30 2012-June 1 2012
Abstract :
Thermoelectric cooling has been well documented as a solution for hotspots in electronic devices. Hotspots arise from the heterogeneous power dissipation of most computer chips and power electronics. This paper reviews the recent progress in thermoelectric self-cooling and goes on to study the transient behavior of a germanium thermoelectric self-cooler. A 3-D thermoelectric simulation is used to explore the effects of various initial conditions, current pulse durations, current pulse magnitudes, and die thicknesses. Additionally, a new cooling metric is introduced in order to more effectively characterize the advantage of transient cooling. The results suggest that transient thermoelectric cooling has the potential to improve hotspot temperature reduction by approximately 30% relative to what is achievable in steady state operation.
Keywords :
elemental semiconductors; germanium; thermoelectric cooling; transient analysis; 3D thermoelectric simulation; Ge; current pulse durations; current pulse magnitudes; die thicknesses; electronic devices; germanium hotspot; germanium thermoelectric self-cooler; heterogeneous power dissipation; hotspot temperature reduction; power electronics; steady state operation; transient behavior; transient thermoelectric self-cooling; Cooling; Geometry; Germanium; Heating; Steady-state; Transient analysis; Thermoelectric; germanium; hotspot; self-cooling; transient cooling;
Conference_Titel :
Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2012 13th IEEE Intersociety Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-9533-7
Electronic_ISBN :
1087-9870
DOI :
10.1109/ITHERM.2012.6231460