Carrier activation in cluster boron implanted Si

Author

Onoda, H. ; Hamamoto, N. ; Nagayama, T. ; Tanjyo, M. ; Umisedo, S. ; Maehara, N. ; Kawamura, Y. ; Nakashima, Y. ; Hashimoto, M. ; Yoshimi, H. ; Sezaki, S. ; Kawakami, K. ; Reyes, J. ; Prussin, S.

Author_Institution

Nissin Ion Equip. Co., Ltd., Kyoto, Japan

fYear

2010

fDate

10-11 May 2010

Firstpage

1

Lastpage

4

Abstract

Boron retained dose and carrier activation after spike RTA in Cluster B₁₈⁺ (Octadecaborane : B₁₈H₁₁⁺) implanted Si have been investigated comparing with BF₂ beamline implanted Si. The retained dose estimated by SIMS depth profile integration is higher in B₁₈ samples. In the same implant set dose, carrier concentrations in B₁₈ samples show almost twice compared with BF₂ samples although mobilities are almost the same in both samples. This means that activation ratio of B₁₈ sample is much higher compared with that of BF₂ sample. This is one of the advantages of cluster ion implantation.

Keywords

carrier density; ion implantation; metal clusters; rapid thermal annealing; secondary ion mass spectra; SIMS depth profile integration; boron retained dose; carrier activation; carrier concentrations; cluster boron implanted silicon; cluster ion implantation; octadecaborane; spike rapid thermal annealing; Acceleration; Annealing; Boron; Contamination; Electrical resistance measurement; Electronic mail; Implants; Ion implantation; Particle beams; Production;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2010 International Workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5866-0

Type

conf

DOI

10.1109/IWJT.2010.5474917

Filename

5474917