Large-signal design of MMMIC Ka-band power amplifiers based on physical models

Author

Plews, A.D. ; Snowden, C.M. ; Howes, M.J.

Author_Institution

Dept. of Electron. & Electr. Eng., Leeds Univ., UK

Volume

3

fYear

1997

fDate

8-13 June 1997

Firstpage

1729

Abstract

A quasi-two-dimensional physical model is used to predict the effects of process variations on the DC, small-, and large-signal behaviour of a pHEMT. A large-signal equivalent circuit model of the mm-wave pHEMT extracted from the physical model is used to predict the non-linear behaviour of an amplifier. A two-tone on-wafer source- and load-pull measurement system has been constructed to allow verification of the modelling procedure.

Keywords

HEMT integrated circuits; equivalent circuits; field effect MIMIC; integrated circuit design; integrated circuit measurement; integrated circuit modelling; intermodulation distortion; millimetre wave amplifiers; millimetre wave measurement; power amplifiers; DC behaviour; Ka-band; MMMIC; equivalent circuit model; large-signal design; load-pull measurement system; nonlinear behaviour; pHEMT; power amplifiers; process variations; quasi-two-dimensional physical model; small-signal behaviour; two-tone on-wafer source measurement; Design automation; Doping; Equivalent circuits; FETs; PHEMTs; Power amplifiers; Power system harmonics; Predictive models; Scattering parameters; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.596780

Filename

596780