Mean time to failure of SnAgCuNi solder joints under DC

Author

Basaran, Cemal ; Li, Shidong ; Hopkins, Douglas C. ; Yao, Wei

Author_Institution

Electron. Packaging Lab., State Univ. of New York at Buffalo, Buffalo, NY, USA

fYear

2012

fDate

May 30 2012-June 1 2012

Firstpage

518

Lastpage

520

Abstract

Electromigration time to failure and electrical resistivity of 95.5%Sn-1.5%Ag-0.5%Cu-0.03W%Ni (SACN) microelectronics solder joints have been investigated experimentally. A Black´s type electromigration time to failure equation is developed to describe the time to failure versus current density and temperature. The activation energy over the range of 83°C~174°C is measured to be 0.77±0.12eV, and the current density exponent is found to be (8.60±1.65). It is also shown that the most commonly used Black´s electromigration time to failure equation cannot be used for solder joints.

Keywords

copper alloys; current density; electromigration; failure analysis; integrated circuit reliability; nickel alloys; silver alloys; solders; tin alloys; SACN microelectronics solder joints; SnAgCuNi; activation energy; black type electromigration time to failure equation; current density exponent; electrical resistivity; mean time to failure; Current density; Electromigration; Equations; Resistance; Resistance heating; Soldering; Temperature measurement; Electromigration; lead-free solder joints; resistance evolution; solder joint resistance; time to failure;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2012 13th IEEE Intersociety Conference on

Conference_Location

San Diego, CA

ISSN

1087-9870

Print_ISBN

978-1-4244-9533-7

Electronic_ISBN

1087-9870

Type

conf

DOI

10.1109/ITHERM.2012.6231474

Filename

6231474