DocumentCode :
2507
Title :
Aluminum Nitride Lamb-Wave Resonators for High-Power High-Frequency Applications
Author :
Campanella, Humberto ; Khine, L. ; Tsai, Julius Minglin
Author_Institution :
Inst. of Microelectron., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore
Volume :
34
Issue :
2
fYear :
2013
fDate :
Feb. 2013
Firstpage :
316
Lastpage :
318
Abstract :
We report a Lamb acoustic wave resonator with high-power-handling, linearity, and intermodulation distortion capabilities. Fundamental physical aspects are examined as well, the study providing the full picture for a high-power radio-frequency application design. Despite their reduced size and freestanding structure, our checkered-electrode aluminum nitride resonators perform +20 dBm 1-dB compression point (P1dB), third-order intermodulation distortion intercept point (IIP3) close to +40 dBm, and second-order intermodulation distortion intercept point (IIP2) around +70 dBm with quality factor Q = 1225 and effective electromechanical coupling coefficient keff2 of 1.4% at 232 MHz, thus challenging current-art contour-mode and bulk acoustic wave resonators.
Keywords :
III-V semiconductors; Q-factor; aluminium compounds; electrodes; intermodulation distortion; surface acoustic wave resonators; wide band gap semiconductors; AlN; Lamb acoustic wave resonator; aluminum nitride Lamb-wave resonators; bulk acoustic wave resonators; checkered-electrode aluminum nitride resonators; compression point; current-art contour-mode; electromechanical coupling coefficient; frequency 232 MHz; high-power high-frequency applications; high-power radiofrequency application design; quality factor; second-order intermodulation distortion intercept point; third-order intermodulation distortion intercept point; Acoustic waves; Aluminum nitride; Electrodes; Etching; Intermodulation distortion; Radio frequency; Resonant frequency; Acoustic resonators; Lamb acoustic wave devices; film bulk acoustic resonators; high-power resonators; radio-frequency (RF) microelectromechanical systems;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2230609
Filename :
6407720
Link To Document :
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