Title :
Improvement of productivity by cluster ion implanter: CLARIS
Author :
Tanjyo, Masayasu ; Hamamoto, Nariaki ; Umisedo, Sei ; Koga, Yuji ; Une, Hideyasu ; Maehara, Noriaki ; Kawamura, Yasunori ; Hashino, Yoshikazu ; Nakashima, Yoshiki ; Hashimoto, Masahiro ; Nagayama, Tsutomu ; Onoda, Hiroshi ; Nagai, Nobuo ; Horsky, Tom N. ;
Author_Institution :
Nissin Ion Equip. Co. Ltd., Kyoto, Japan
Abstract :
The cluster ion beam implanter named CLARIS has been developed for beyond 45nm device production use, which is characterized by the high productivity, high effective low energy high current, and preciseness of incident beam angle and dose uniformity. For the USJ process application, a cluster beam co-implantation is introduced. Carbon cluster co-implantation and the boron cluster beam implantation productivity are evaluated from a COO and CoC view point and compared with the conventional high current implanter.
Keywords :
boron; carbon; ion implantation; productivity; semiconductor device manufacture; semiconductor junctions; CLARIS layout; USJ process application; beam angle; boron cluster beam implantation; carbon cluster coimplantation; cluster beam coimplantation; cluster ion beam implanter; cost of consumable; cost of ownership; device production use; dose uniformity; productivity; Productivity;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5474977
