Evaluation by spectroscopic ellipsometryof Si amorphized layer thickness after implantation and solid phase re-growth at low annealing temperatures

We have applied spectroscopic ellipsometry (SE) to measure amorphized layer thickness after implantation and solid phase re-growth at low annealing temperatures as a non-destructive, in line implant monitoring technique. The SE measurement treats the heavily damaged layer as a part of the amorphized layer. And it is an area very sensitive to the temperature. Therefore, this sensitivity of detecting the heavily damaged layer can be used for monitoring the performance and conditions of individual implanters. In this paper, we examine the thickness of amorphous and heavily-damaged interface layers formed by cluster ion implantation (B10Hx, B16Hy, B36Hz, C5Ha, C7Hb, C16Hc), by helium ions in a plasma doping tool, and single ion implantation. In addition, we report on behavior in the amorphous layer formed by As ion implantation with a heat-treatment of 100-600 degree C.