Title :
Study on palladium germanide on Ge-on-Si substrate for nanoscale Ge channel Schottky barrier MOSFETs
Author :
Oh, Se-Kyung ; Zhang, Ying-Ying ; Shin, Hong-Sik ; Han, In-Shik ; Kwon, Hyuk-Min ; Park, Byoung-Soek ; Park, Sang-Uk ; Bok, Jung-Deuk ; Lee, Ga-Won ; Wang, Jin-Suk ; Lee, Hi-Deok
Author_Institution :
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea
Abstract :
In this article, we investigated the fabrication and characteristics of Pd germanide Schottky contacts on n-type Ge substrate. It is shown that the lowest sheet resistance and uniform Pd germanide can be obtained by a one step RTP at 400°C for 30 sec. The proposed Pd germanide/nGe contact exhibited electron Schottky barrier height and work function of 0.565~0.577 eV and 4.695~4.702 eV, respectively. Therefore, the proposed Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.
Keywords :
MOSFET; Schottky barriers; germanium compounds; nanocontacts; palladium compounds; rapid thermal processing; Ge; RTP; electron Schottky barrier height; n-type Ge substrate; nanoscale Ge channel Schottky barrier MOSFET; nanoscale Schottky barrier Ge channel MOSFET; palladium germanide Schottky contacts; sheet resistance; temperature 400 C; time 30 s; Electrical resistance measurement; Electrons; MOSFETs; Palladium; Schottky barriers; Schottky diodes; Semiconductor diodes; Substrates; Temperature; Tin;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5474982
