Title :
Epitaxial NiSi2 source and drain technology for atomic-scale junction control in silicon nanowire MOSFETs
Author :
Migita, Shinji ; Morita, Yukinori ; Mizubayashi, Wataru ; Ota, Hiroyuki
Author_Institution :
Nanodevice Innovation Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
Epitaxial NiSi2 source and drain with dopant segregation technique is applied to silicon nanowire (SNW) MOSFETs. Growth of epitaxial NiSi2 is characterized by self-limiting growth behavior and stability of (111) facets. These features realize the layout of junction edges in atomic-scale. Advantage of epitaxial NiSi2 growth technique is demonstrated by performances of SNW MOSFETs.
Keywords :
MOSFET; nanowires; semiconductor doping; semiconductor epitaxial layers; semiconductor junctions; silicon compounds; NiSi2; SNW MOSFET; atomic-scale junction control; dopant segregation; drain technology; epitaxial growth; epitaxial source; junction edge layout; self-limiting growth behavior; silicon nanowire MOSFET; stability; Annealing; Atomic layer deposition; Electrodes; MOSFETs; Nickel; Silicidation; Silicides; Silicon compounds; Very large scale integration; Wet etching;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5474984
