Metallic source and drain module for FDSOI MOSFETs applications

We report on the development of metallic source and drain module for FDSOI MOSFETs including lateral salicidation of the channel edges and dopant segregation technique. Metal barrier type (TiN or Ti/TiN), optimized doping conditions, controlled PtSi penetration below spacers and suitable cleaning of the silicide surface lead to very low specific contact resistivity values (down to 0.1 Ωμm²). We thus demonstrate metallic source and drain pMOSFETs with promising electrical behavior suitable for high performance applications (Ion = 345 μA.μm^-1 and Ioff = 30nA.μm^-1 at -s1V for 50 nm gate length). Using a similar approach, we also demonstrate state-of-the-art nMOSFETs fabricated with not yet optimized Er and Yb salicidation processes.