Title :
Er inserted Ni silicide metal source/drain for Schottky MOSFETs
Author :
Ahmet, Parhat ; Hosoda, Wataru ; Noguchi, Kohei ; Ohishi, Yoshihisa ; Kakushima, Kuniyuki ; Tsutsui, Kazuo ; Iwai, Hiroshi
Author_Institution :
Frontier Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
A Schottky barrier height modulation technique for achieving a low Schottky barrier height in Ni silicide metal source/drain by Er layer insertion was reviewed. The effectiveness and possibility of the technique was demonstrated by fabricating Schottky barrier source/drain MOSFETs onto both bulk and SOI substrates.
Keywords :
MOSFET; Schottky barriers; silicon-on-insulator; substrates; Er inserted Ni silicide metal source/drain; Er layer insertion; SOI substrates; Schottky MOSFET; Schottky barrier height modulation; Annealing; Electrodes; Erbium; Fabrication; MOSFETs; Schottky barriers; Schottky diodes; Silicidation; Silicides; Sputtering;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5474989
