• DocumentCode
    2507352
  • Title

    Er inserted Ni silicide metal source/drain for Schottky MOSFETs

  • Author

    Ahmet, Parhat ; Hosoda, Wataru ; Noguchi, Kohei ; Ohishi, Yoshihisa ; Kakushima, Kuniyuki ; Tsutsui, Kazuo ; Iwai, Hiroshi

  • Author_Institution
    Frontier Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
  • fYear
    2010
  • fDate
    10-11 May 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A Schottky barrier height modulation technique for achieving a low Schottky barrier height in Ni silicide metal source/drain by Er layer insertion was reviewed. The effectiveness and possibility of the technique was demonstrated by fabricating Schottky barrier source/drain MOSFETs onto both bulk and SOI substrates.
  • Keywords
    MOSFET; Schottky barriers; silicon-on-insulator; substrates; Er inserted Ni silicide metal source/drain; Er layer insertion; SOI substrates; Schottky MOSFET; Schottky barrier height modulation; Annealing; Electrodes; Erbium; Fabrication; MOSFETs; Schottky barriers; Schottky diodes; Silicidation; Silicides; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology (IWJT), 2010 International Workshop on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5866-0
  • Type

    conf

  • DOI
    10.1109/IWJT.2010.5474989
  • Filename
    5474989
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2507352