Title :
Future trends and applications of ultra-clean technology
Author_Institution :
Dept. of Electron., Tohoku Univ., Sendai, Japan
Abstract :
It is demonstrated that ultraclean technology is a crucial factor in developing high-quality processing technology for future ULSI fabrication. The simultaneous realization of three conditions, i.e. an ultraclean processing environment, an ultraclean wafer surface, and perfect process-parameter control, is what makes it possible to realize high-quality processing. A novel process flow for advanced CMOS device fabrication has been established by introducing total low-temperature processing as well as metal fluoridation technology, both of which have been realized for the first time by ultraclean technology.<>
Keywords :
CMOS integrated circuits; VLSI; integrated circuit technology; process control; CMOS device fabrication; ULSI fabrication; low-temperature processing; metal fluoridation technology; process-parameter control; processing environment; processing technology; ultra-clean technology; wafer surface; CMOS technology; Conductivity; Crystallization; Fabrication; Semiconductor device noise; Silicon; Substrates; Surface cleaning; Temperature; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74225
