Multi-reversed-junction LDMOST with very high breakdown voltage per unit length

Author

Cheng, Jianbing ; Zhang, Bo ; Li, Zhaoji ; Guo, Yufeng ; Yu, Shujuan

Author_Institution

Sch. of Electron. Sci.&Eng., Nanjing Univ. of Posts & Telecommun., Nanjing, China

fYear

2010

fDate

10-11 May 2010

Firstpage

1

Lastpage

4

Abstract

A novel non-uniform multi-reversed-junction power MOSFET is presented in this paper. The high and uniform electric field in substrate is achieved due to modulating from space charges in the buried layers during operation in the blocking mode, and the breakdown voltage is improved considerably. A detailed study of the influence of various important parameters on blocking characteristics was carried out. Simulation results show that the breakdown voltage per unit length of the presented device is increased from 7V/μm of the conventional power MOSFET to 16.3V/μm with nearly same drift region and substrate parameters.

Keywords

electric breakdown; power MOSFET; semiconductor junctions; blocking mode; electric field; multi-reversed-junction LDMOST; nonuniform multi-reversed-junction power MOSFET; very high breakdown voltage; Avalanche breakdown; Costs; Diffusion tensor imaging; Doping; Low voltage; MOSFET circuits; Power MOSFET; Space charge; Space technology; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2010 International Workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5866-0

Type

conf

DOI

10.1109/IWJT.2010.5475004

Filename

5475004