Title :
An analytical model for the subthreshold swing of double-gate MOSFETs
Author :
Ding, Zhihao ; Hu, Guangxi ; Gu, Jinglun ; Liu, Ran ; Wang, Lingli ; Tang, Tingao
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
A model for the Symmetric Double-Gate (SDG) n-MOSFET is presented. Poisson equation is solved analytically and channel potential is obtained. The analytical expression for subthreshold swing is achieved. Model results are compared with Medici simulations, good agreement is observed. The subthreshold swing of an SDG MOSFET will be improved by increasing the channel length, by reducing either the silicon body thickness or the gate oxide thickness, and by increasing the silicon body doping concentration.
Keywords :
MOSFET; Poisson equation; semiconductor doping; Medici simulation; Poisson equation; analytical expression; analytical model; channel length; channel potential; double-gate MOSFET; gate oxide thickness; silicon body doping concentration; silicon body thickness; subthreshold swing; symmetric double-gate n-MOSFET; Analytical models; Boundary conditions; CMOS technology; Doping; Electric potential; MOSFET circuits; Permittivity; Poisson equations; Silicon; Voltage;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5475006
