Title :
Gate-voltage tunable terahertz detection by a GaAs/AlGaAs quantum device
Author :
Suzuki, Daichi ; Oda, Shunri ; Kawano, Yukio
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
We report a gate-voltage-controlled terahertz (THz) detector based on a two-dimensional electron gas (2DEG) field-effect transistor. The electron density of the 2DEG can be varied with the gate voltage. In this way, we controlled the amplitude of the THz detected signal by the gate voltage, indicating the role of the external switch for the THz detection.
Keywords :
III-V semiconductors; aluminium compounds; electron density; field effect transistor switches; gallium arsenide; millimetre wave field effect transistors; semiconductor quantum dots; submillimetre wave transistors; terahertz wave detectors; two-dimensional electron gas; 2DEG field effect transistor; GaAs-AlGaAs; electron density; gate voltage-controlled terahertz detector; gate-voltage tunable terahertz detection; quantum device; switch; terahertz signal ampitude; two-dimensional electron gas field effect transistor; Carbon nanotubes; Detectors; Gallium arsenide; HEMTs; Logic gates; MODFETs; Magnetic fields;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380132
