Heterojunction fabricated by deposition of ZnO films on boron-doped nanocrystalline diamond film

Author

Huang, Jian ; Wang, Linjun ; Tang, Ke ; Xu, Run ; Zhang, Jijun ; Xia, Yiben ; Lu, Xionggang

Author_Institution

Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai, China

fYear

2010

fDate

10-11 May 2010

Firstpage

1

Lastpage

3

Abstract

Boron-doped p-type nanocrystalline diamond (NCD) films were grown by microwave plasma chemical vapor deposition (MPCVD) method via introduction of the gas mixtures of methane, hydrogen and diborane. The effects of B/C ratios of gas mixtures on the electrical properties of NCD films were investigated by Hall effect measurement system. N-type ZnO films were prepared on NCD films by radio-frequency (RF) magnetron sputtering method. The dependence of electrical resistivity and carrier concentration of ZnO thin films on oxygen partial pressure was studied. In addition, I-V characteristic of the n-ZnO/p-NCD heterojunction was measured. The results showed a rectifying behavior of this structure.

Keywords

Hall effect; III-VI semiconductors; boron; diamond; electric properties; electrical resistivity; nanostructured materials; p-n heterojunctions; plasma CVD; semiconductor growth; semiconductor thin films; sputtering; wide band gap semiconductors; B; B/C ratio effect; Hall effect measurement system; NCD films; ZnO; ZnO film deposition; boron-doped p-type nanocrystalline diamond film; carrier concentration; electrical property; electrical resistivity dependence; microwave plasma chemical vapor deposition method; n-ZnO NCD heterojunction; n-type ZnO films; oxygen partial pressure; p-NCD heterojunction; radiofrequency magnetron sputtering method; Chemical vapor deposition; Heterojunctions; Hydrogen; Microwave theory and techniques; Plasma chemistry; Plasma measurements; Plasma properties; Radio frequency; Sputtering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2010 International Workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5866-0

Type

conf

DOI

10.1109/IWJT.2010.5475010

Filename

5475010