Title :
Heterojunction fabricated by deposition of ZnO films on boron-doped nanocrystalline diamond film
Author :
Huang, Jian ; Wang, Linjun ; Tang, Ke ; Xu, Run ; Zhang, Jijun ; Xia, Yiben ; Lu, Xionggang
Author_Institution :
Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai, China
Abstract :
Boron-doped p-type nanocrystalline diamond (NCD) films were grown by microwave plasma chemical vapor deposition (MPCVD) method via introduction of the gas mixtures of methane, hydrogen and diborane. The effects of B/C ratios of gas mixtures on the electrical properties of NCD films were investigated by Hall effect measurement system. N-type ZnO films were prepared on NCD films by radio-frequency (RF) magnetron sputtering method. The dependence of electrical resistivity and carrier concentration of ZnO thin films on oxygen partial pressure was studied. In addition, I-V characteristic of the n-ZnO/p-NCD heterojunction was measured. The results showed a rectifying behavior of this structure.
Keywords :
Hall effect; III-VI semiconductors; boron; diamond; electric properties; electrical resistivity; nanostructured materials; p-n heterojunctions; plasma CVD; semiconductor growth; semiconductor thin films; sputtering; wide band gap semiconductors; B; B/C ratio effect; Hall effect measurement system; NCD films; ZnO; ZnO film deposition; boron-doped p-type nanocrystalline diamond film; carrier concentration; electrical property; electrical resistivity dependence; microwave plasma chemical vapor deposition method; n-ZnO NCD heterojunction; n-type ZnO films; oxygen partial pressure; p-NCD heterojunction; radiofrequency magnetron sputtering method; Chemical vapor deposition; Heterojunctions; Hydrogen; Microwave theory and techniques; Plasma chemistry; Plasma measurements; Plasma properties; Radio frequency; Sputtering; Zinc oxide;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5475010
