Electrical and structural properties of Al-doped ZnO films

Author

Tang, Ke ; Wang, Linjun ; Huang, Jian ; Zhang, Jijun ; Shi, Weimin ; Xia, Yiben

Author_Institution

Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai, China

fYear

2010

fDate

10-11 May 2010

Firstpage

1

Lastpage

3

Abstract

Al-doped ZnO films with different Al concentrations were prepared on freestanding diamond (FSD) substrates by radio-frequency (RF) reactive magnetron sputtering method. The effects of Al concentrations and annealing process on the structural and electrical properties of the ZnO films were studied by X-ray diffraction (XRD) and Hall effect measurement system respectively. The experimental results suggested the crystalline quality of ZnO films decreased with the increase of Al doping concentrations and a maximum carrier concentration is obtained for the film doped with 2 wt.% Al. The high temperature annealing process is helpful to enhance the Hall mobility of the films.

Keywords

Hall mobility; II-VI semiconductors; X-ray diffraction; annealing; semiconductor doping; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; C; Hall effect; Hall mobility; X-ray diffraction; XRD; ZnO; annealing; doping; electrical properties; freestanding diamond substrates; radio-frequency reactive magnetron sputtering; structural properties; Annealing; Crystallization; Electric variables measurement; Hall effect; Radio frequency; Sputtering; Substrates; X-ray diffraction; X-ray scattering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2010 International Workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5866-0

Type

conf

DOI

10.1109/IWJT.2010.5475011

Filename

5475011