Title :
The effects of a deep n-well junction on RF circuit performanc
Author :
Ye, Song ; Li, Jun
Author_Institution :
Chengdu Univ. of Inf. Technol., Chengdu, China
Abstract :
This paper presents the effects of a deep n-well junction on RF circuit performance based on a 0.35um SiGe technology. With a combination of measurement and field solver results, it shows that the deep n-well yields about 20 dB of isolation and eliminates the inter-block noise coupled through the substrate in certain degree. The isolation varies with different junction voltage and at different frequency. The results of this paper offer a guideline for applying n-wells to realize a high isolation in high frequency IC design.
Keywords :
integrated circuit design; integrated circuit yield; isolation technology; radiofrequency integrated circuits; semiconductor junctions; RF circuit performance; deep n-well junction; deep n-well yields; field solver results; high frequency IC design; inter-block noise; isolation; junction voltage; Circuit optimization; Coupling circuits; Germanium silicon alloys; Guidelines; Integrated circuit noise; Isolation technology; Noise measurement; Radio frequency; Silicon germanium; Voltage;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5475012
