Title :
Determination of minority carrier mobility in heavily doped Si using a new model based on percolation theory
Author :
Jain, S.C. ; Ghannam, M.Y. ; Mertens, R.P. ; Nijs, J.F. ; Van Overstraeten, R.
Author_Institution :
Interuniv. Microelectron. Center, Leuven, Belgium
Abstract :
The effect of band tails on the mobility of heavily doped silicon is calculated using a model based on percolation theory. The proposed model allows the determination of the ratio of free minority carrier to total minority carrier density. Only holes in n-type silicon are treated. It is noted that the result can be used in modeling and designing high efficiency solar cells.
Keywords :
carrier density; elemental semiconductors; minority carriers; percolation; silicon; solar cells; band tails; free minority carrier; heavily doped Si; high efficiency solar cells; holes; minority carrier density; minority carrier mobility; model; n-type Si; percolation theory; Charge carrier density; Fluctuations; Maxwell equations; Microelectronics; Photovoltaic cells; Physics; Potential energy; Silicon; Solid modeling; Solid state circuits; Tail; Thermal conductivity;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105801
