Title :
Influence of cavity-trapped amplified luminescence on laser diode optical properties
Author :
Gribkovskii, V.P. ; Voitikov, S.V. ; Kuzmin, A.N. ; Ryabtsev, G.I. ; Kragler, R.
Author_Institution :
Stepanov Inst. of Phys, Acad. of Sci., Minsk, Byelorussia
Abstract :
The values of power densities for the amplified luminescence (superluminescence) trapped in a laser diode (LD) cavity have been calculated as a function of the current and temperature for different types of LDs. AlGaAs, InGaAs/AlGaAs and InGaAsP/InP heterostructures with bulk and quantum well active layers have been analyzed. In the case of powerful and surface-emitting LDs, the amplified luminescence was demonstrated to have a considerable influence (comparable in some instances with nonradiative Auger recombination) on the threshold current, maximum output power and temperature dependence of optical gain spectra. The effect of the amplified luminescence on the laser transient processes has been studied by numerical solution of the LD rate equations. This made it apparent that the LD cavity-trapped amplified luminescence changes the laser delay time, peak intensity, and pulse duration and can limit seriously the maximum modulation frequency of high-speed LDs
Keywords :
laser cavity resonators; laser theory; optical modulation; quantum well lasers; semiconductor lasers; superradiance; surface emitting lasers; transient analysis; AlGaAs heterostructure; InGaAs-GaAs; InGaAsP-InP; InGaAsP/InP heterostructures; ZnGaAs/AlGaAs heterostructures; bulk active layers; cavity-trapped amplified luminescence; current dependence; high-speed LDs; laser delay time; laser diode optical properties; laser transient processes; maximum modulation frequency; maximum output power; nonradiative Auger recombination; numerical solution; optical gain spectra; peak intensity; power densities; pulse duration; quantum well active layers; rate equations; superluminescence; surface-emitting LDs; temperature dependence; threshold current; Diode lasers; Indium gallium arsenide; Indium phosphide; Luminescence; Pulse modulation; Radiative recombination; Superluminescent diodes; Surface emitting lasers; Temperature; Threshold current;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668578
