DocumentCode :
2508077
Title :
Comparison of THz emitters and detectors pumped at 1560 nm: DAST, ErAs:InGaAs and LTG GaAs
Author :
Ospald, F. ; Zouaghi, W. ; Rämer, J. -M ; Beigang, R.
Author_Institution :
Dept. of Phys., Univ. of Kaiserslautern, Kaiserslautern, Germany
fYear :
2012
fDate :
23-28 Sept. 2012
Firstpage :
1
Lastpage :
2
Abstract :
Several options for THz emitters and detectors operated at pump wavelengths around 1560 nm were investigated. Results from photoconductive antennas on In0.53Ga0.47As-based epilayers as well as DAST crystals are presented. Furthermore, the use of standard LTG GaAs antennas without frequency doubling is explored.
Keywords :
III-V semiconductors; aerospace materials; erbium compounds; gallium arsenide; indium compounds; millimetre wave antennas; organic compounds; terahertz wave detectors; DAST crystal; ErAs:InGaAs; GaAs; THz detector; THz emitter; epilayer; photoconductive antenna; wavelength 1560 nm; Antennas; Crystals; Detectors; Gallium arsenide; Laser excitation; Principal component analysis; Pump lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
ISSN :
2162-2027
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/IRMMW-THz.2012.6380150
Filename :
6380150
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2508077
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