Design and development of an S-band Low Noise Amplifier

Author

Giri, Santu Kr ; Bose, Chayanika

Author_Institution

Electron. & Instrum. Dept, Central Mech. Eng. Res. Inst. (CSIR), Durgapur, India

fYear

2010

fDate

17-19 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

This paper describes the design and development of a single stage Low Noise Amplifier (LNA) working at 3 GHz frequency. The single stage amplifier is designed by using commercially available p-HEMT, Filtronic (RFMD) FPD6836P70. The LNA makes use of plated through holes (PTH) to obtain good high frequency grounding of the transistor. The prototype LNA is tested at room temperature, and the measured Noise Figure (NF) and Gain is obtained as 1.03 dB and 16.3 dB respectively. The realized amplifier with distributed matching networks is found to perform reasonably well in the tests of gain, return loss and noise figure measurements in the desired frequency band. The practical results are also found to closely match with the simulated results. We present a description of the LNA design, results obtained from the measurements, and their comparison with simulated results.

Keywords

circuit noise; high electron mobility transistors; low noise amplifiers; microwave amplifiers; network synthesis; Filtronic FPD6836P70; LNA; S-band low noise amplifier; distributed matching networks; frequency 3 GHz; noise figure; p-HEMT; return loss; single stage amplifier; temperature 293 K to 298 K; Gain; Loss measurement; Low-noise amplifiers; Noise; Noise figure; Stability analysis; Distributed Matching Networks; Gain; Low Noise Amplifier; Noise Figure; Plated Through Hole; Radial Stub; Stability Analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

India Conference (INDICON), 2010 Annual IEEE

Conference_Location

Kolkata

Print_ISBN

978-1-4244-9072-1

Type

conf

DOI

10.1109/INDCON.2010.5712723

Filename

5712723