Title :
Cryogenic amplifier based receivers at submillimeter wavelengths
Author :
Chattopadhyay, Goutam ; Reck, Theodore ; Schlecht, Erich ; Lin, Richard ; Deal, William
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
The operating frequency of InP high electron mobility transistor (HEMT) based amplifiers has moved well in the submillimeter-wave frequencies over the last couple of years. Working amplifiers with usable gain in waveguide packages has been reported beyond 700 GHz. When cooled cryogenically, they have shown substantial improvement in their noise temperature. This has opened up the real possibility of cryogenic amplifier based heterodyne receivers at submillimeter wavelengths for ground-based, air-borne, and space-based instruments for astrophysics, planetary, and Earth science applications. This paper provides an overview of the science applications at submillimeter wavelengths that will benefit from this technology. It also describes the current state of the InP HEMT based cryogenic amplifier receivers at submillimeter wavelengths.
Keywords :
cryogenic electronics; high electron mobility transistors; indium compounds; submillimetre wave amplifiers; submillimetre wave receivers; submillimetre wave transistors; waveguides; Earth science applications; HEMT; InP; airborne instrument; astrophysics; cryogenic amplifier based heterodyne receivers; ground-based instrument; high electron mobility transistor; noise temperature; planetary; space-based instruments; submillimeter wavelengths; submillimeter-wave frequency; waveguide packages; working amplifiers; Extraterrestrial measurements; HEMTs; Mixers; Noise; Receivers; Temperature; Temperature measurement;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380169
